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Proceedings Paper

Linear optical response of Si1-xGex compounds
Author(s): A. Ferriera da Silva; N. Souza Dantas; R. Ahuja; I. Pepe; Eronides Felisberto da Silva Jr.; O. Nur; M. Willander; C. Persson
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Paper Abstract

Si1-xGex is a good candidate as a substitute material for Si in a low-power and high-speed semiconductor device technologies. Optical devices, such as heterojunction bipolar transistors, are already in industrial production. The samples are grown on Si(001) with both n- and p-type impurities and with different Ge concentrations. The linear optical response of Si1-xGex is investigated theoretically using a full-potential linearized augmented plane wave method with respect to composition x. The calculated real and imaginary parts of the dielectric function ε(ω) = ε1(ω) + iε2(ω) were found to be in good agreement with recent spectroscopic ellipsometry measurements performed by Bahng et al., J. Phys.: Condens. Matter 13, 777 (2001). We also perform absorption measurements for different type of samples showing the variation of energy gaps as a function of Ge concentrations.

Paper Details

Date Published: 25 March 2005
PDF: 9 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.591261
Show Author Affiliations
A. Ferriera da Silva, Univ. Federal da Bahia (Brazil)
N. Souza Dantas, Univ. Federal da Bahia (Brazil)
Univ. Estadual de Feira de Santana (Brazil)
Instituto Nacional de Pesquisas Espaciais (Brazil)
R. Ahuja, Uppsala Univ. (Sweden)
I. Pepe, Univ. Federal da Bahia (Brazil)
Eronides Felisberto da Silva Jr., Univ. Federal de Pernambuco (Brazil)
O. Nur, Chalmers Univ. of Technology (Sweden)
M. Willander, Chalmers Univ. of Technology (Sweden)
C. Persson, Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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