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Proceedings Paper

III-nitride LEDs with photonic crystal structures
Author(s): Jonathan J. Wierer; Michael R. Krames; John E. Epler; Nathan F. Gardner; Joel R. Wendt; Mihail M. Sigalas; Steven R. J. Brueck; Dong Li; Michael Shagam
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Paper Abstract

Electrical operation of III-Nitride light emitting diodes (LEDs) with photonic crystal structures is demonstrated. Employing photonic crystal structures in III-Nitride LEDs is a method to increase light extraction efficiency and directionality. The photonic crystal is a triangular lattice formed by dry etching into the III-Nitride LED. A range of lattice constants is considered (a ~ 270 - 340nm). The III-Nitride LED layers include a tunnel junction providing good lateral current spreading without a semi-absorbing metal current spreader as is typically done in conventional III-Nitride LEDs. These photonic crystal III-Nitride LED structures are unique because they allow for carrier recombination and light generation proximal to the photonic crystal (light extraction area) yet displaced from the absorbing metal contact. The photonic crystal Bragg scatters what would have otherwise been guided modes out of the LED, increasing the extraction efficiency. The far-field light radiation patterns are heavily modified compared to the typical III-Nitride LED’s Lambertian output. The photonic crystal affects the light propagation out of the LED surface, and the radiation pattern changes with lattice size. LEDs with photonic crystals are compared to similar III-Nitride LEDs without the photonic crystal in terms of extraction, directionality, and emission spectra.

Paper Details

Date Published: 7 March 2005
PDF: 6 pages
Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); doi: 10.1117/12.591218
Show Author Affiliations
Jonathan J. Wierer, Lumileds Lighting, LLC (United States)
Michael R. Krames, Lumileds Lighting, LLC (United States)
John E. Epler, Lumileds Lighting, LLC (United States)
Nathan F. Gardner, Lumileds Lighting, LLC (United States)
Joel R. Wendt, Sandia National Labs. (United States)
Mihail M. Sigalas, Agilent Technologies, Inc. (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)
Dong Li, Univ. of New Mexico (United States)
Michael Shagam, Boston Univ. (United States)

Published in SPIE Proceedings Vol. 5739:
Light-Emitting Diodes: Research, Manufacturing, and Applications IX
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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