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Proceedings Paper

Lock-on effect in GaAs photoconductive switches
Author(s): Hanmin Zhao; Jung H. Hur; Peyman Hadizad; Martin A. Gundersen
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Paper Abstract

The lock-on effect observed in high power, light-activated GaAs bulk switches is very important in determining the GaAs power device performance. An analytical model to explain the physical origin of this effect is presented. In this model, negative resistance associated with transferred-electron effect creates high-field-induced avalanche injection at the anode contact. A regional approximation is used to calculate the field distribution in the device and to derive the device f-V characteristics. Reported experimental results are in good agreement with the model over a wide range of device parameters.

Paper Details

Date Published: 12 May 1992
PDF: 7 pages
Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59079
Show Author Affiliations
Hanmin Zhao, Univ. of Southern California (United States)
Jung H. Hur, Univ. of Southern California (United States)
Peyman Hadizad, Univ. of Southern California (United States)
Martin A. Gundersen, Univ. of Southern California (United States)


Published in SPIE Proceedings Vol. 1632:
Optically Activated Switching II
Guillermo M. Loubriel, Editor(s)

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