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Proceedings Paper

Modeling of electron-beam-controlled diamond switches
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Paper Abstract

As a material for high power solid state switches, diamond promises to outperform any other semiconductor material because of its high dielectric strength, high electron and hole mobility and its excellent thermal properties. With the conductance controlled by high energy electron- beams, which can be generated using standard vacuum tube technology, thin film diamond switches can be given a very simple and compact design. This manuscript discusses the promises and limitations of this novel switch concept on the basis of steady state and transient device simulation, and investigates in particular, the suitability of electron-beam controlled diamond switches for closing and opening applications.

Paper Details

Date Published: 12 May 1992
PDF: 11 pages
Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992);
Show Author Affiliations
Ralf Peter Brinkmann, Old Dominion Univ. (United States)
Karl H. Schoenbach, Old Dominion Univ. (United States)

Published in SPIE Proceedings Vol. 1632:
Optically Activated Switching II
Guillermo M. Loubriel, Editor(s)

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