Proceedings Paper
Modeling the effect of deep impurity ionization on GaAs photoconductive switches| Format | Member Price | Non-Member Price |
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Paper Abstract
The ionization coefficient of deep traps in GaAs is determined from a gas breakdown model together with the recent experimental data obtained at LLNL (Lawrence Livermore National Laboratory) and Boeing. Using this coefficient in our nonlinear device transport code, we have investigated theoretically the nonlinear switching phenomena in GaAs devices. The results obtained from our investigations show that if we take into consideration the effect of the field ionization of the deep traps, we can show how the "Lock-On" phenomena could occur in the device.
Paper Details
Date Published: 12 May 1992
PDF: 11 pages
Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59054
Published in SPIE Proceedings Vol. 1632:
Optically Activated Switching II
Guillermo M. Loubriel, Editor(s)
PDF: 11 pages
Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59054
Show Author Affiliations
Jick H. Yee, Lawrence Livermore National Lab. (United States)
Gizzing H. Khanaka, Lawrence Livermore National Lab. (United States)
Gizzing H. Khanaka, Lawrence Livermore National Lab. (United States)
Robert L. Druce, Lawrence Livermore National Lab. (United States)
Michael D. Pocha, Lawrence Livermore National Lab. (United States)
Michael D. Pocha, Lawrence Livermore National Lab. (United States)
Published in SPIE Proceedings Vol. 1632:
Optically Activated Switching II
Guillermo M. Loubriel, Editor(s)
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