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Proceedings Paper

Superluminescent diodes at 1.55 um based on quantum-well and quantum-dot active regions
Author(s): Wei Li; Risto Ronkko; Andreas Rydefalk; Pekka Poyhonen; Markus Pessa
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Paper Abstract

Quantum-well and quantum-dot superluminescent diodes operating at 1.55 μm at high power have been developed. An optical output power of more than 600 mW in pulsed mode was produced from the device having 8 identical quantum-wells at room temperature, corresponding to the wall-plug efficiency of 28%. A continuous wave power was 26 mW (p-side up mounting) and the spectral modulation depth was 15% over the entire emission spectral width of 25 nm. For a device with 5 non-identical quantum-wells, a 255-nm spectral width centered at 1.55 μm was achieved. For a device with 5 closely identical layers of quantum-dots the gain medium exhibited a spectral width of 181 nm around 1.55 μm.

Paper Details

Date Published: 7 March 2005
PDF: 6 pages
Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); doi: 10.1117/12.590362
Show Author Affiliations
Wei Li, Tampere Univ. of Technology (Finland)
Risto Ronkko, Tampere Univ. of Technology (Finland)
Andreas Rydefalk, Tampere Univ. of Technology (Finland)
Pekka Poyhonen, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 5739:
Light-Emitting Diodes: Research, Manufacturing, and Applications IX
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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