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Proceedings Paper

An improved modal gain model for semiconductor lasers
Author(s): Cheng Guan Lim; Stavros Iezekiel; Christopher M. Snowden
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Paper Abstract

The calculated gain spectrum of a semiconductor laser based on a generic modal gain model reveals a gain peak that is higher than measured. Analyses of the model and the gain mechanism in semiconductor lasers suggest that the accuracy of the model can be improved by re-formulating the carrier occupation probabilities associated with the model. As a result, good agreement between the optical gain spectrum calculated using the revised model and measured results is achieved.

Paper Details

Date Published: 28 April 2005
PDF: 7 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.590215
Show Author Affiliations
Cheng Guan Lim, Institute for Infocomm Research (Singapore)
Stavros Iezekiel, Univ. of Leeds (United Kingdom)
Christopher M. Snowden, Univ. of Leeds (United Kingdom)

Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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