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Proceedings Paper

AlGaInP light-emitting diode with metal reflector structure
Author(s): Wayne Jan; Tien-fu Liao; Tzer Peng Chen; Chih Sung Chang
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Paper Abstract

We have remarkably improved the Metal Bonding (MB) AlGaInP LED luminous efficiency in the dominant wavelength range form 570 nm to 630 nm. Micro Shaping technology is fabricated on the Surface of LED Chip in order to enhance the extraction efficiency. As a result, the luminous efficiency of the new micro shaping Structure AlGaInP LED can achieve 80 lm/w, at 615 nm dominant wavelength under 20mA injection current. The luminous efficiency increased up to 50% than report valve before.

Paper Details

Date Published: 7 March 2005
PDF: 5 pages
Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005);
Show Author Affiliations
Wayne Jan, United Epitaxy Co., Ltd. (Taiwan)
Tien-fu Liao, United Epitaxy Co., Ltd. (Taiwan)
Tzer Peng Chen, United Epitaxy Co., Ltd. (Taiwan)
Chih Sung Chang, United Epitaxy Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 5739:
Light-Emitting Diodes: Research, Manufacturing, and Applications IX
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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