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Proceedings Paper

Temperature dependent output characteristics of p-doped 1.1 and 1.3 µm quantum dot lasers
Author(s): Z. Mi; S. Fathpour; P. Bhattacharya; A. R. Kovsh; S. S. Mikhrin; I. L. Krestnikov; A. V. Kozhukhov; N. N. Ledentsov
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Paper Abstract

The characteristics of p-doped 1.1 μm and 1.3 μm self-assembled In(Ga)As quantum dot lasers grown by molecular beam epitaxy have been studied. With optimum p-doping, we demonstrate quantum dot lasers with zero-temperature dependence of the threshold current (T0 = ∞) and the output slope efficiency. These characteristics are explained through a self-consistent model that includes temperature-dependent Auger recombination in the quantum dots. With tunnel injection, we measure greatly enhanced -3dB frequency response, 25 GHz and 11 GHz in 1.1 μm and 1.3 μm tunnel injection quantum dot lasers, respectively. These devices also exhibit near zero α-parameters and extremely small chirp (< 0.2 Å), in addition to temperature insensitive operation.

Paper Details

Date Published: 28 April 2005
PDF: 12 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.589891
Show Author Affiliations
Z. Mi, Univ. of Michigan (United States)
S. Fathpour, Univ. of Michigan (United States)
P. Bhattacharya, Univ. of Michigan (United States)
A. R. Kovsh, NSC-Nanosemiconductor GmbH (Germany)
S. S. Mikhrin, NSC-Nanosemiconductor GmbH (Germany)
I. L. Krestnikov, NSC-Nanosemiconductor GmbH (Germany)
A. V. Kozhukhov, NSC-Nanosemiconductor GmbH (Germany)
N. N. Ledentsov, NSC-Nanosemiconductor GmbH (Germany)

Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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