The characteristics of p-doped 1.1 μm and 1.3 μm self-assembled In(Ga)As quantum dot lasers grown by molecular beam epitaxy have been studied. With optimum p-doping, we demonstrate quantum dot lasers with zero-temperature dependence of the threshold current (T₀ = ∞) and the output slope efficiency. These characteristics are explained through a self-consistent model that includes temperature-dependent Auger recombination in the quantum dots. With tunnel injection, we measure greatly enhanced -3dB frequency response, 25 GHz and 11 GHz in 1.1 μm and 1.3 μm tunnel injection quantum dot lasers, respectively. These devices also exhibit near zero α-parameters and extremely small chirp (< 0.2 Å), in addition to temperature insensitive operation.

Date Published: 28 April 2005
PDF: 12 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.589891

Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)