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Proceedings Paper

Selectively grown quantum well active layer in a photonic crystal optical microcavity
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Paper Abstract

Photonic crystal microcavity devices containing InGaAs active layers grown on GaAs substrates have demonstrated poor performance largely because of rapid, non-radiative recombination at the air-InGaAs interface formed during the fabrication of the photonic crystal slab. We have used selective area epitaxial regrowth of the quantum well active layer to localize it to the defect of the photonic crystal structure. The fabrication process is described and the potential application to resonant photonic crystal devices is discussed.

Paper Details

Date Published: 25 March 2005
PDF: 8 pages
Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); doi: 10.1117/12.589855
Show Author Affiliations
Victor C. Elarde, Univ. of Illinois/Urbana-Champaign (United States)
Yong Kwan Kim, Univ. of Illinois/Urbana-Champaign (United States)
Kent D. Choquette, Univ. of Illinois/Urbana-Champaign (United States)
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 5729:
Optoelectronic Integrated Circuits VII
Louay A. Eldada; El-Hang Lee, Editor(s)

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