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Proceedings Paper

Above threshold modeling of single-spatial-mode edge-emitting diode lasers
Author(s): A. P. Napartovich; N. N. Elkin; A. G. Sukharev; V. N. Troshchieva; D. V. Vysotsky; M. Nesnidal; E. Stiers; Luke J. Mawst; Dan Botez
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Paper Abstract

There is an increasing need for single-spatial-mode, edge-emitting semiconductor lasers with reliable cw output power of around 1 W for applications such as pumps for rare-earth-doped fiber amplifiers and free-space communications. The design of respective devices is still a challenging task for experimenters, and software can assist very much in doing analyses of potentially perspective designs. We have developed a 3D numerical code supplied with a user-friendly interface for active diode-laser structures, taking into account light diffraction and carrier diffusion. The Watt-Ampere characteristics are calculated by changing the drive current density in the equation for the carrier-number density. To evaluate a single-mode stability limit, a procedure is developed to calculate 3-5 higher order optical modes on a 'frozen background': gain, carrier-induced index variation, as produced by the operated mode at a fixed drive level. Modal gains of these modes are compared to the calculated threshold gains for each mode. Because of non-uniform gain saturation by the operated mode, modal gains for higher-order modes increase with drive current due to beneficial overlap of their fields with the gain. When one of the higher-order modes approaches its threshold, this puts an upper limit for stable single-mode operation. A graphical interface allows for viewing near- and far-field patterns of any mode in the form of 3D surfaces or contour-plots. Scanning of profiles of mode intensity in an arbitrary cross section in the output plane and in far-field zone is available, too. Results of analyses of a number of published designs are reported.

Paper Details

Date Published: 28 April 2005
PDF: 13 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.589551
Show Author Affiliations
A. P. Napartovich, Troitsk Institute for Innovation and Fusion Research (Russia)
N. N. Elkin, Troitsk Institute for Innovation and Fusion Research (Russia)
A. G. Sukharev, Troitsk Institute for Innovation and Fusion Research (Russia)
V. N. Troshchieva, Troitsk Institute for Innovation and Fusion Research (Russia)
D. V. Vysotsky, Troitsk Institute for Innovation and Fusion Research (Russia)
M. Nesnidal, AlfaLight Inc. (United States)
E. Stiers, AlfaLight Inc. (United States)
Luke J. Mawst, Univ. of Wisconsin/Madison (United States)
Dan Botez, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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