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Proceedings Paper

Uniformity-improving dummy structures for deep reactive ion etching (DRIE) processes
Author(s): Soren Jensen; Jonas M. Jensen; Ulrich J. Quaade; Ole Hansen
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Paper Abstract

In typical DRIE processes, the etch rate variation across the wafer increases with pattern density, severely limiting the pattern densities that can be used at a specified etch rate tolerance. Here, we present a scheme for including uniformity-improving dummy structures in the etch mask layout that enable the use of high-density patterns in many DRIE process types. The dummy structures take up relatively little space in the layout and reduce the total etch rate variation of a 35% etchable area pattern by 66% while maintaining a high etch rate.

Paper Details

Date Published: 22 January 2005
PDF: 8 pages
Proc. SPIE 5715, Micromachining and Microfabrication Process Technology X, (22 January 2005); doi: 10.1117/12.588552
Show Author Affiliations
Soren Jensen, Technical Univ. of Denmark (Denmark)
Jonas M. Jensen, Technical Univ. of Denmark (Denmark)
Ulrich J. Quaade, Technical Univ. of Denmark (Denmark)
Ole Hansen, Technical Univ. of Denmark (Denmark)

Published in SPIE Proceedings Vol. 5715:
Micromachining and Microfabrication Process Technology X
Mary-Ann Maher; Harold D. Stewart, Editor(s)

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