
Proceedings Paper
Spectral properties of the resonant dynamic gratings, produced by radiation of semiconductor lasers in metallic vaporFormat | Member Price | Non-Member Price |
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Paper Abstract
Grating properties of level population in resonant atomic Rb ((lambda) equals 7800 angstroms) and Cs ((lambda) equals 8521 angstroms) vapor both in thick vapor cell and near the dielectric- vapor boundary are investigated in reference to the problem of the creation of spectral- selective elements for semiconductor lasers with external cavities.
Paper Details
Date Published: 1 April 1992
PDF: 8 pages
Proc. SPIE 1724, Tunable Diode Laser Applications, (1 April 1992); doi: 10.1117/12.58681
Published in SPIE Proceedings Vol. 1724:
Tunable Diode Laser Applications
Alexander I. Nadezhdinskii; Alexander M. Prokhorov, Editor(s)
PDF: 8 pages
Proc. SPIE 1724, Tunable Diode Laser Applications, (1 April 1992); doi: 10.1117/12.58681
Show Author Affiliations
Andrew E. Korolev, S.I. Vavilov State Optical Institute (Russia)
Vladimir N. Nazarov, S.I. Vavilov State Optical Institute (Russia)
Published in SPIE Proceedings Vol. 1724:
Tunable Diode Laser Applications
Alexander I. Nadezhdinskii; Alexander M. Prokhorov, Editor(s)
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