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Proceedings Paper

InGaAsP/InP diode laser pumping sources for eye-safe solid state and fiber lasers
Author(s): Dmitri Z. Garbuzov; Igor V. Kudryashov; Alexei Komissarov
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Paper Abstract

Record high power InP-based diode laser pumps operating at 1450 nm and 1850 nm have been fabricated and tested. Single-element 100 mm stripe lasers and 1 cm long arrays (both with cavity length of 2-2.5 mm) are appropriate for fiber and bulk solid-state laser pumping, respectively. The differential quantum efficiency for 1450 nm lasers was 55% and 47% for1850 nm emitters. The maximum CW output powers for 1 cm diode arrays are 42 W for 1450 nm and 14 W for 1850 nm wavelength ranges. The output photon flow (per facet) at maximum current for 1450 nm sources is 40% higher than that for commercial GaAs-based emitters, while for 1850 nm sources it is 50 % lower. A simple estimation shows that the parameters achieved for 1450 nm diode lasers could provide overall efficiency for an 1640 nm Er3+:YAG laser with InP-based pumping comparable with that of a GaAs laser pumped Er3+:YAG laser. More importantly, the expected active media overheating in the case of InP-based pumping is lower by an order of magnitude compared to a GaAs laser pumped Er3+:YAG laser. Data on the lifetime for InP-based diode arrays confirm that high reliability is an additional advantage of long wavelength pumps compared to traditional GaAs-based pumps.

Paper Details

Date Published: 20 December 2004
PDF: 7 pages
Proc. SPIE 5594, Physics and Applications of Optoelectronic Devices, (20 December 2004); doi: 10.1117/12.585540
Show Author Affiliations
Dmitri Z. Garbuzov, Princeton Lightwave, Inc. (United States)
Igor V. Kudryashov, Princeton Lightwave, Inc. (United States)
Alexei Komissarov, IPG Photonics Corp. (United States)

Published in SPIE Proceedings Vol. 5594:
Physics and Applications of Optoelectronic Devices
Joachim Piprek, Editor(s)

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