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Proceedings Paper

Design and performance of charge multiplying color FIT CCD image sensor
Author(s): Izumi Kobayashi; Hiroaki Shibuya; Toshio Tachibana; Takahiro Nishiwaki; Shunji Kashima; Jaroslav Hynecek
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Paper Abstract

The paper describes important design features and resulting performance of a color VGA format Frame Interline Transfer CCD image sensor that utilizes Charge Carrier Multiplication for increased sensitivity and low noise. The description includes the details of the photo site design that is formed by a pinned photodiode with a lateral anti-blooming drain. The design details of the photo-site transfer gate region are also given together with the design details of the vertical CCD register that result in a fast charge transfer into the memory and thus low smear. Since the device is not using the vertical overflow anti-blooming drain for the booming control, the near IR performance is not reduced. The color sensing capability is achieved by employing either RGB or complementary color filters. The remaining focus of the article is on the typical characterization results such as the CTE, image lag, and low dark current. The NIR and color imaging performance at low light levels is investigated in detail and characterized. In conclusion several typical scene color images taken by the camera that uses the developed charge-multiplying FIT CCD image sensor are shown.

Paper Details

Date Published: 7 March 2005
PDF: 8 pages
Proc. SPIE 5677, Sensors and Camera Systems for Scientific and Industrial Applications VI, (7 March 2005); doi: 10.1117/12.585358
Show Author Affiliations
Izumi Kobayashi, Texas Instruments Japan Ltd. (Japan)
Hiroaki Shibuya, Texas Instruments Japan Ltd. (Japan)
Toshio Tachibana, Texas Instruments Japan Ltd. (Japan)
Takahiro Nishiwaki, Texas Instruments Japan Ltd. (Japan)
Shunji Kashima, Texas Instruments Japan Ltd. (Japan)
Jaroslav Hynecek, Isetex, Inc. (United States)

Published in SPIE Proceedings Vol. 5677:
Sensors and Camera Systems for Scientific and Industrial Applications VI
Morley M. Blouke, Editor(s)

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