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Proceedings Paper

High-spatial-resolution studies of UV-laser-damage morphology in SiO2 thin films with artificial defects
Author(s): Semyon Papernov; Ansgar W. Schmid
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Paper Abstract

Atomic force microscopy was employed to investigate the morphology of UV, nanosecond-pulsed-laser damage in SiO2 thin films. Gold nanoparticles, 18.5 nm in diameter and embedded in the film, were used as calibrated absorbing defects. Damage-crater diameter, depth, volume, and cross-sectional profiles were measured as a function of laser fluence and the lodging depth of gold nanoparticles. The results indicate that at laser fluences close to the crater-formation threshold and a lodging depth of a few particle diameters, the dominating regime of the material removal is melting and evaporation. The morphology of craters initiated by deep absorbing defects, with a lodging depth larger than ~10 particle diameters, clearly points to the dominating role of a shock-wave-induced material-removal mechanism. Crater-diameter variation with lodging depth and laser fluence is compared with theoretical predictions.

Paper Details

Date Published: 21 February 2005
PDF: 15 pages
Proc. SPIE 5647, Laser-Induced Damage in Optical Materials: 2004, (21 February 2005); doi: 10.1117/12.584899
Show Author Affiliations
Semyon Papernov, Univ. of Rochester (United States)
Ansgar W. Schmid, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 5647:
Laser-Induced Damage in Optical Materials: 2004
Gregory J. Exarhos; Arthur H. Guenther; Norbert Kaiser; Keith L. Lewis; M. J. Soileau; Christopher J. Stolz, Editor(s)

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