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Proceedings Paper

GaSb-based lasers for spectra region 2-4 µm: challenges and limitations
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Paper Abstract

Laser sources operating in spectral region 2 - 4 μm are in demand for ultra-sensitive laser spectroscopy, medical diagnostics, home security, industrial process monitoring, infrared countermeasures, optical wireless communications, etc. Currently, solid state lasers and optical parametric oscillators and amplifiers are used as coherent light sources in this spectral region. Solid state and parametric sources are being optically pumped by near infrared diode lasers. This intermediate energy transfer step from near infrared pumping diode to mid infrared emitting device reduces power-conversion system efficiency. Development of the highly efficient semiconductor diode lasers operating in 2 - 4 μm spectral region will significantly improve the performance of the many existing systems and enable new applications. In this work we will describe major breakthrough in the development of the high power room temperature operated mid-IR semiconductor lasers. The performance limitations of the devices based on type-I and type-II quantum well (QW) active region design will be analyzed. Future directions in device performance optimization and enhancement of the wavelength for high power room temperature operation will be discussed.

Paper Details

Date Published: 25 March 2005
PDF: 6 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005);
Show Author Affiliations
Gregory L. Belenky, SUNY/Stony Brook (United States)
Leon Shterengas, SUNY/Stony Brook (United States)
J.G. Kim, Sarnoff Corp. (United States)
Ramon Martinelli, Sarnoff Corp. (United States)
Sergey Suchalkin, SUNY/Stony Brook (United States)
Mikhail V. Kisin, SUNY/Stony Brook (United States)

Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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