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Proceedings Paper

1.55 μm Ge islands resonant-cavity-enhanced narrowband detector
Author(s): Chuan Bo Li; Bu Wen Cheng; Rong Wei Mao; Yu Hua Zuo; Jin Zhong Yu; Q. M. Wang
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Paper Abstract

The high quality Ge islands material with 1.55μm photo-response grown on SOI substrate is reported. Due to the modulation of the cavity formed by the mirrors at the surface and the buried SiO2 interface, seven sharp and strong peaks with narrow linewidth are found. And a 1.55 μm Ge islands resonant-cavity-enhanced (RCE) detector with narrowband was fabricated by a simple method. The bottom mirror was deposited in the hole formed by anisotropically etching in a basic solution from the backside of the sample with the buried SiO2 layer in silicon-on-insulator substrate as the etch-stop layer. Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2~1.65 μm. The peak responsivity of the RCE detector at 1543.8 nm is 0.028 mA/W and a full width at half maximum of 5 nm is obtained. Compared with the conventional p-i-n photodetector, the responsivity of RCE detector has a nearly threefold enhancement.

Paper Details

Date Published: 17 January 2005
PDF: 7 pages
Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); doi: 10.1117/12.584260
Show Author Affiliations
Chuan Bo Li, Institute of Semiconductors, CAS (China)
Bu Wen Cheng, Institute of Semiconductors, CAS (China)
Rong Wei Mao, Institute of Semiconductors, CAS (China)
Yu Hua Zuo, Institute of Semiconductors, CAS (China)
Jin Zhong Yu, Institute of Semiconductors, CAS (China)
Q. M. Wang, Institute of Semiconductors, CAS (China)

Published in SPIE Proceedings Vol. 5644:
Optoelectronic Devices and Integration
Hai Ming; Xuping Zhang; Maggie Yihong Chen, Editor(s)

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