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Proceedings Paper

Role of laser pulse duration and ambient nitrogen pressure in deposition of AIN thin films
Author(s): Carmen Ristoscu; Corina Gabriela Dorcioman; Gabriel Socol; Ion N. Mihailescu; Agryro Klini; Costas Fotakis
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Paper Abstract

AlN thin films with thickness in the nanometer range were prepared by Pulsed Laser Deposition technique. The extension of PLD/RPLD for obtaining good AlN nanostructures is a consequence of high reproducibility, control of the film growth rate and stoichiometry, and low impurity contamination. We investigated in this paper the effect of laser wavelength, pulse duration, and ambient gas pressure on the composition and morphology of the deposited films. We demonstrate that we deposited stoichiometric and even textured AlN thin films by PLD from AlN targets using 3 laser sources generating pulses of 34 ns@248 nm (source A), 450 fs@248 nm (source B), and 50 fs@800 nm (source C). Plamsa investigations by Optical Emission Spectroscopy and Time-of-Flight Mass Spectrometry are in agreement with the studies of films, showing plasma richer in Al ions for source A, and the prevalent presence of AlN positive ions in the plasma generated under the action of sources B and C.

Paper Details

Date Published: 21 October 2004
PDF: 7 pages
Proc. SPIE 5581, ROMOPTO 2003: Seventh Conference on Optics, (21 October 2004); doi: 10.1117/12.582815
Show Author Affiliations
Carmen Ristoscu, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Corina Gabriela Dorcioman, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Gabriel Socol, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Ion N. Mihailescu, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Agryro Klini, Foundation for Research and Technology-Hellas (Greece)
Costas Fotakis, Foundation for Research and Technology-Hellas (Greece)


Published in SPIE Proceedings Vol. 5581:
ROMOPTO 2003: Seventh Conference on Optics
Valentin I. Vlad, Editor(s)

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