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Proceedings Paper

High-K ZST material for microwave and millimeter wave applications
Author(s): A. Ioachim; R. Ramer; M. I. Toacsan; M. G. Banciu; L. Nedelcu; D. Ghetu; G. Stoica; G. Annino; M. Cassettari; M. Martinelli
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Paper Abstract

Wireless communications systems require new materials with special properties in specific frequency bands. The investigations on ZST type ceramics, (Zr0.8Sn0.2)TiO4, presented in this paper, recommend this materials for applications in microwaves and millimeter waves. The ZST materials were prepared using a standard solid-state reaction technology. The samples morphology, phase-composition and microstructure investigations were performed by using the scanning electron microscopy (SEM), and energy-disperse X-ray spectrometry (EDX). The crystalline phases were identified by X-ray diffractometry (XRD). The electromagnetic properties were investigated on ZST resonators by using a Computer Aided Measurement (CAM) in microwaves, combining a HP 8757C network analyzer and a HP 8350B sweep oscillator. The dielectric characteristics at millimeter waves were analyzed by investigation of the Whispering Gallery Modes on ZST disks. The low level NiO doping provides ZST materials with temperature coefficient τf in the range (-2 ÷ +4) ppm/°C and decreases the dielectric loss. Materials with high values of the Qf product up to 50,000 and a dielectric constant about 36 at microwave frequencies were obtained. ZST dielectric resonators and substrates for hybrid integrated circuits with dimensions 1” x 1” and thickness in the range 0.6 ÷ 1 mm were manufactured.

Paper Details

Date Published: 16 February 2004
PDF: 10 pages
Proc. SPIE 5648, Smart Materials III, (16 February 2004); doi: 10.1117/12.582428
Show Author Affiliations
A. Ioachim, National Institute for Materials Physics (Romania)
R. Ramer, Univ. of New South Wales (Australia)
M. I. Toacsan, National Institute for Materials Physics (Romania)
M. G. Banciu, National Institute for Materials Physics (Romania)
L. Nedelcu, National Institute for Materials Physics (Romania)
D. Ghetu, National Institute for Materials Physics (Romania)
G. Stoica, IPEE s.a. (Romania)
G. Annino, Institute for Chemical and Physical Processes, CNR (Italy)
M. Cassettari, Institute for Chemical and Physical Processes, CNR (Italy)
M. Martinelli, Institute for Chemical and Physical Processes, CNR (Italy)

Published in SPIE Proceedings Vol. 5648:
Smart Materials III
Alan R. Wilson, Editor(s)

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