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Proceedings Paper

Nanofabrication utilizing the atomic-force microscope
Author(s): L. A. Nagahara; Patrick Ian Oden; Arun Majumdar; J. P. Carrejo; J. Graham; John Alexander
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Paper Abstract

We describe a lithographic technique using atomic force microscopy (AFM) to expose commercially available photoresists in a controllable manner. In contrast to scanning tunneling microscopy lithography on photoresists, the AFM has the advantage of having better control of the contact force between the probe tip and sample and thus reduces the possibility of physical damage to the resist material during exposure. Using a metal coated cantilever, we have been able to create resist patterns at the nanometer-scale.

Paper Details

Date Published: 1 May 1992
PDF: 11 pages
Proc. SPIE 1639, Scanning Probe Microscopies, (1 May 1992); doi: 10.1117/12.58184
Show Author Affiliations
L. A. Nagahara, Univ. of Tokyo (United States)
Patrick Ian Oden, Arizona State Univ. (United States)
Arun Majumdar, Arizona State Univ. (United States)
J. P. Carrejo, Motorola Advanced Technology Ctr. (United States)
J. Graham, Arizona State Univ. (United States)
John Alexander, Park Scientific Instruments (United States)

Published in SPIE Proceedings Vol. 1639:
Scanning Probe Microscopies
Srinivas Manne, Editor(s)

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