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Proceedings Paper

Improvement of nanostructured GaN films grown on sapphire by laser-induced reactive epitaxy
Author(s): H. Zhou; J. M. Bell; F. Phillipp; H. Schroeder
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Paper Abstract

Gallium nitride (GaN) thin films were grown by laser induced molecular beam epitaxy (LIMBE). Their microstructures were studied by transmission electron microscopy (TEM). Threading dislocations with Burgers vectors of 1/3<1120>, 1/3<1123> and [0001] were observed as common linear defects with predominantly the first type. Additionally, nano-structured planar defects as called domain boundaries were found. Convergent beam electron diffraction (CBED) technique coupled with chemical and cathodoluminescence measurements was employed to characterize the nano-structured domains, indicating that a domain is of Ga-polarity with respect to the adjacent matrix which is of N-polarity. It was found that experimental parameters such as N/Ga ratio were closely associated with the development of domains as well as the surface morphology. High-resolution transmission electron microscopy (HRTEM) results indicate that IDBs have Ga-N bonds between domains and the adjacent matrix without displacements along the c-axis in the basal planes. Upon the determination of the polar property of a thin GaN film and the optimization of experimental conditions, the nano-structured GaN films can be modified and controlled by changing substrate and pre-growing an AlGaN layer and a GaN buffer layer.

Paper Details

Date Published: 16 February 2004
PDF: 8 pages
Proc. SPIE 5648, Smart Materials III, (16 February 2004); doi: 10.1117/12.581385
Show Author Affiliations
H. Zhou, Queensland Univ. of Technology (Australia)
J. M. Bell, Queensland Univ. of Technology (Australia)
F. Phillipp, Max-Planck-Institut fur Metallforschung (Germany)
H. Schroeder, KLEO Halbleitertechnik GmbH & Co. KG (Germany)

Published in SPIE Proceedings Vol. 5648:
Smart Materials III
Alan R. Wilson, Editor(s)

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