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Proceedings Paper

A high-g overload-protected accelerometer with a novel microstructure
Author(s): Weiping Chen; Wei Wang; Lei Tian; Xiaowei Liu; Mingxue Huo; Ruichao Zhang; Deyin Zhang
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Paper Abstract

A high-g overload protected piezoresistive accelerometer with the cave form section and two-end-fixed beams was introduced in this paper. Based on the finite element method (FEM) simulation, an optimal design of the microstructure was presented. The accelerometer was fabricated by standard IC process, ICP plasma etching and silicon anodic bonding technique. The testing results show that the accelerometer can bear 20,000g shock, the non-linearity reaches to 0.5% in the ±50g full scale, sensitivity reaches 0.8mV/g, and the operation frequency range is from DC to 2kHz.

Paper Details

Date Published: 30 December 2004
PDF: 5 pages
Proc. SPIE 5641, MEMS/MOEMS Technologies and Applications II, (30 December 2004); doi: 10.1117/12.581191
Show Author Affiliations
Weiping Chen, Harbin Institute of Technology (China)
Wei Wang, China Electronics Technology Group Corp. (China)
Lei Tian, China Electronics Technology Group Corp. (China)
Xiaowei Liu, Harbin Institute of Technology (China)
Mingxue Huo, Harbin Institute of Technology (China)
Ruichao Zhang, Harbin Institute of Technology (China)
Deyin Zhang, Harbin Institute of Technology (China)

Published in SPIE Proceedings Vol. 5641:
MEMS/MOEMS Technologies and Applications II
Zhichun Ma; Guofan Jin; Xuyuan Chen, Editor(s)

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