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Proceedings Paper

Modeling field effect pH sensor
Author(s): Pavel Kornilovitch
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Paper Abstract

The principles behind the chemical field effect sensor are outlined. A block model for the resistance mode of operation is described. Particular attention is paid to the interaction between semiconductor electrostatics, solution electrostatics, and chemical equilibrium at the surface. The site-binding model of the surface potential and the main models of the electrolyte double layer are reviewed. The semiconductor part of the model is generalized to finite channel thickness. Operation is illustrated using pH sensing as an example. The pH sensitivity is analyzed as a function of semiconductor thickness, gate dielectric thickness, ionic strength of the solution, and other factors.

Paper Details

Date Published: 29 December 2004
PDF: 12 pages
Proc. SPIE 5593, Nanosensing: Materials and Devices, (29 December 2004); doi: 10.1117/12.580843
Show Author Affiliations
Pavel Kornilovitch, Hewlett-Packard Co. (United States)

Published in SPIE Proceedings Vol. 5593:
Nanosensing: Materials and Devices
M. Saif Islam; Achyut K. Dutta, Editor(s)

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