Proceedings Paper
Exploration of a new wafer-level hermetic sealing method by Cu/Sn isothermal solidification technique for MEMS/NEMS devices| Format | Member Price | Non-Member Price |
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Paper Abstract
A study was preformed to explore the possibility of using Isothermal Solidification technique for sealing medium preparation in wafer level vacuum/hermetic package of MEMS/NEMS devices and to examine the effect of plasma treatment and bonding environment on the shear strength of the sealed structure. Appropriate plasma treatment can improve the bonding strength of the sealing structure and optimized parameters were obtained. The bonding strength of the sample bonded in vacuum environment is larger than in other environments. The hermeticity of the sealed structure was also evaluated. Preliminary results show that the sealed structure can satisfy the hermetic package criterion of MIL STD 883E.
Paper Details
Date Published: 23 February 2005
PDF: 5 pages
Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); doi: 10.1117/12.580355
Published in SPIE Proceedings Vol. 5650:
Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II
Jung-Chih Chiao; David N. Jamieson; Lorenzo Faraone; Andrew S. Dzurak, Editor(s)
PDF: 5 pages
Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); doi: 10.1117/12.580355
Show Author Affiliations
Maohua Du, Shanghai Institute of Microsystems and Information Technology (China)
Wei Xu, Shanghai Institute of Microsystems and Information Technology (China)
Wei Xu, Shanghai Institute of Microsystems and Information Technology (China)
Le Luo, Shanghai Institute of Microsystems and Information Technology (China)
Published in SPIE Proceedings Vol. 5650:
Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II
Jung-Chih Chiao; David N. Jamieson; Lorenzo Faraone; Andrew S. Dzurak, Editor(s)
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