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Proceedings Paper

Fabrication of high-speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication
Author(s): Hao-Chung Kuo; Y H. Chang; Y. A. Chang; K. F. Tseng; L. H. Laih; S. C. Wang; Hsin-Chieh Yu; Chia-Pin Sung; Hung-Pin D. Yang
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Paper Abstract

In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of ~0.4 mA, and slope efficiencies of ~ 0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA)1/2 are demonstrated. We have accumulated life test data up to 1000 hours at 70°C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semi-insulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.

Paper Details

Date Published: 31 January 2005
PDF: 8 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.577050
Show Author Affiliations
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Y H. Chang, National Chiao Tung Univ. (Taiwan)
Y. A. Chang, National Chiao Tung Univ. (Taiwan)
K. F. Tseng, National Chiao Tung Univ. (Taiwan)
L. H. Laih, National Chiao Tung Univ. (Taiwan)
S. C. Wang, National Chiao Tung Univ. (Taiwan)
Hsin-Chieh Yu, Industrial Technology Research Institute (Taiwan)
Chia-Pin Sung, Industrial Technology Research Institute (Taiwan)
Hung-Pin D. Yang, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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