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Proceedings Paper

Time-integrated and time-resolved photoluminescence in ZnO epitaxial thin films grown onto (100) silicon substrates by MOCVD
Author(s): Bing Guo; Y. H. Li; Hong Ye; Peifu F. Gu; Kam Sing Wong
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Paper Abstract

Room-temperature spectral and temporal behaviors of UV and visible emissions in ZnO epilayers grown onto (100) silicon substrates have been investigated by means of time-integrated and time-resolved photoluminescence(TIPL & TRPL). The PL lifetimes as short as 25-50 ps for the excitonic UV lines peaked at ~380 nm were found, indicative of ultrafast trapping of excitons by defects states inside the band gap. Compared to its as-grown precursor, the ZnO epilayer subjected to postgrowth thermal annealing in air showed enhanced intensities of both UV as well green emissions by nearly the same factor of ~3.1, in accompany with complete disappearance of the impurity luminescence peaked at 2.83 eV. More importantly, the green luminescence in the post-annealed ZnO was observed to decay as hyperbolic t-1 and logarithmically shift its peak emission toward higher energies with increased excitation intensity, in excellent agreement with the tunnel-assisted donor-acceptor pair(DAP) recombination model. The possible mechanism of compensation between intrinsic impurities was also discussed.

Paper Details

Date Published: 12 January 2005
PDF: 11 pages
Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); doi: 10.1117/12.576360
Show Author Affiliations
Bing Guo, Zhejiang Univ. (China)
Y. H. Li, Zhejiang Univ. (China)
Hong Ye, Zhejiang Univ. (China)
Peifu F. Gu, Zhejiang Univ. (China)
Kam Sing Wong, Hong Kong Univ. of Science and Technology (Hong Kong China)

Published in SPIE Proceedings Vol. 5632:
Light-Emitting Diode Materials and Devices
Gang Yu; Chuangtian Chen; Changhee Lee, Editor(s)

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