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Proceedings Paper

Dielectric-based distributed Bragg reflector (DBR) mirrors for tunable MOEMS applications
Author(s): Vicknesh Shanmugan; Mithilesh A. Shah; S. L. Teo; Akkipeddi Ramam
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Paper Abstract

High reflectivity Distributed Bragg Reflector (DBR) mirrors comprising of quarter wavelength stacks of epitaxial or dielectric layers are essential in various photonic active and passive devices. Our focus has been on optimizing plasma enhanced chemical vapor deposited (PECVD) Si3N4/SiO2 (170nm/255nm ± 20nm) based DBR stacks for high reflectivity to be incorporated in a novel structure comprising of all dielectric based mirrors for tunable resonant cavity devices in a MEMS configuration. Simulated results based on Macleod program predicts a high reflectivity of 99.7% for 10.5 pairs of quarter wavelength layers of Si3N4 and SiO2 centered at the telecom wavelength of 1550 nm. Si3N4/SiO2 DBR pairs of 5.5, 7.5 and 10.5 are deposited by PECVD on InP substrate and reflectance spectra observed on spectrophotometer. A flat pass band of 354nm bandwidth and 99.8% peak reflectivity for 10.5 pairs of DBR stack is observed. Characterization of DBR layers is done using ToF-SIMS for interface abruptness. XPS and Ellispometry is used to ascertain stoichiometry and refractive index respectively. CHF3 chemistry is used to etch the DBR mirror stacks to achieve highly anisotropic walls by ICP technique, as observed under SEM. We are able to demonstrate filtering of a single wavelength in the C-band region, for different cavity spacing of SiO2 layer, sandwiched between two highly reflecting mirrors.

Paper Details

Date Published: 30 December 2004
PDF: 12 pages
Proc. SPIE 5641, MEMS/MOEMS Technologies and Applications II, (30 December 2004); doi: 10.1117/12.572816
Show Author Affiliations
Vicknesh Shanmugan, Institute of Materials Research and Engineering (Singapore)
Mithilesh A. Shah, Institute of Materials Research and Engineering (Singapore)
S. L. Teo, Institute of Materials Research and Engineering (Singapore)
Akkipeddi Ramam, Institute of Materials Research and Engineering (Singapore)

Published in SPIE Proceedings Vol. 5641:
MEMS/MOEMS Technologies and Applications II
Zhichun Ma; Guofan Jin; Xuyuan Chen, Editor(s)

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