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Proceedings Paper

The photodetected function of silicon photoelectronic lambda negative resistance transistor (PLBT)
Author(s): Shi-lin Zhang; Bo Zhang; Wei-lian Guo; Lu-hong Mao; Pei-ning Zhang
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Paper Abstract

In this paper, the photo-detected and controlled functions based on silicon photo-electronic Lambda transistor (PLBT) are reported. PLBT is composed of a npn vertical bipolar transistor as main device and a enhancement-mode MOSFET transistor as feedback device which connected in parallel across the base and collector terminals of bipolar transistor. Photo-electronic-lambda bipolar transistor (PLBT) is one important member of Si-photo electronic negative resistance devices. It has wide applications in photo-electronic coupler, light detector, light sensor and other photo-electronic circuit modules, which is significant for the further study of photo-electronic devices and circuits. When the Si-photo-electronic negative transistor device works as a load, it has two stable output states (bistability characteristics) with the change of the input light signals. Using the photo-bistable and self-locking characteristics of the PLBT, a photo-controlled Bistable Logic Circuit Element has been set up successfully. Through detail studying and analyzing to the operation feature and load feature of the photo-controlled bistable circuit, the nonlinear characteristic of the circuit is demonstrated. Furthermore the applications of this circuit element have been studied and verified.

Paper Details

Date Published: 17 January 2005
PDF: 8 pages
Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); doi: 10.1117/12.572717
Show Author Affiliations
Shi-lin Zhang, Tianjin Univ. (China)
Bo Zhang, Tianjin Univ. (China)
Wei-lian Guo, Tianjin Univ. (China)
Lu-hong Mao, Tianjin Univ. (China)
Pei-ning Zhang, Xunhua College of Communication (China)

Published in SPIE Proceedings Vol. 5644:
Optoelectronic Devices and Integration
Hai Ming; Xuping Zhang; Maggie Yihong Chen, Editor(s)

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