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Proceedings Paper

Laser conditioning and electronic defects of HfO2 and SiO2 thin films
Author(s): Mark R. Kozlowski; Michael C. Staggs; Frank Rainer; J. H. Stathis
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Paper Abstract

Multilayer Hf02/Si02 high reflectors (HR) and polarizers show a permanent increase in their 1(4-nm damage thresholds followinglaserconditioningatsubthreshold fluences. Threshold increasesof2-3x are typical. In an effort tobetter understand the condifioning effect we have made laser conditioning and electronic property measurements on single layers of these two materials. The laser damage threshold of 1-. un thick e-beam deposited Si02 was increased by laser conditioning for wavelengths ranging from 355 to 1064 nm. The damage threshold of 2 srnglelayers was not influenced by sub4hreshold illumination. As-deposited thin films of a-Si02 are known to contain paramagnetic electronic defects. We have used electron paramagnetic resonance (EPR) to study the concentrations and types of defects present in single layer and multilayer films of Hf02 5102. E'' and oxygen hole centers with concentrations on tI order of 107/cm3 have been measured in the Si02 layers. A previously unreported defect has been observed for Hf02. The concentrationofdefects was studied bothbeforeand afterlaserconditioningand damagewith 1064-nm photons. These electronic structure measurements are discussed in relation to an electronic defect model for laser conditioning of dielectric multilayers. 1.

Paper Details

Date Published: 1 June 1991
PDF: 14 pages
Proc. SPIE 1441, Laser-Induced Damage in Optical Materials: 1990, (1 June 1991); doi: 10.1117/12.57234
Show Author Affiliations
Mark R. Kozlowski, Lawrence Livermore National Lab. (United States)
Michael C. Staggs, Lawrence Livermore National Lab. (United States)
Frank Rainer, Lawrence Livermore National Lab. (United States)
J. H. Stathis, IBM/Thomas J. Watson Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1441:
Laser-Induced Damage in Optical Materials: 1990
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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