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Proceedings Paper

Uncooled directly modulated 1.3-µm AlGaInAs-MQW DFB laser diodes
Author(s): Toshitaka Aoyagi; Satoshi Shirai; Kazuhisa Takagi; Tohru Takiguchi; Yutaka Mihashi; Chikara Watatani; Takashi Nishimura
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Paper Abstract

We have proved that short cavity length and large coupling coefficient structure can increase the relaxation oscillation frequency of directly modulated 1.3mm DFB-LDs for 10Gb/s operation. The grating with large coupling coefficient can be made of high refractive index InGaAsP material (=narrow band gap energy material), which has to be fabricated in the n-type InP cladding layer to prevent large hole and electron accumulation in the grating layer. By using this grating, 1.3mm AlGaInAs quarter lambda phase shifted DFB-LDs successfully revealed excellent eye diagrams with over 10% margin for OC-192 mask at the temperature range of 25-95 deg.C. Furthermore, we newly propose multi-phase shifted gating to 10Gb/s quarter lambda phase-shifted DFB-LDs to suppress the deterioration of eye diagrams due to non-uniform longitudinal distribution of light intensity and carrier density.

Paper Details

Date Published: 25 October 2004
PDF: 6 pages
Proc. SPIE 5595, Active and Passive Optical Components for WDM Communications IV, (25 October 2004); doi: 10.1117/12.570996
Show Author Affiliations
Toshitaka Aoyagi, Mitsubishi Electric Corp. (Japan)
Satoshi Shirai, Mitsubishi Electric Corp. (Japan)
Kazuhisa Takagi, Mitsubishi Electric Corp. (Japan)
Tohru Takiguchi, Mitsubishi Electric Corp. (Japan)
Yutaka Mihashi, Mitsubishi Electric Corp. (Japan)
Chikara Watatani, Mitsubishi Electric Corp. (Japan)
Takashi Nishimura, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 5595:
Active and Passive Optical Components for WDM Communications IV
Achyut Kumar Dutta; Abdul Ahad Sami Awwal; Niloy K. Dutta; Yasutake Ohishi, Editor(s)

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