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Proceedings Paper

Electrical properties of Cd0.3Ni0.7+xMnxFe2O4 ferrites
Author(s): M. G. Patil; V. C. Mahajan; B. V. Bhise; S. M. Chandake; B. L. Patil; A. B. Patil; S. R. Sawant; S. A. Patil
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Paper Abstract

Electrical resistivity of Cd0.3Ni0.7 + xMnxFe2 - 2xO4 ferrites has been measured in the temperature range from 300 K to 1000 K. Three distinct regions have been observed in log (rho) Vs 103/T curves for all the samples. This is explained on the basis of the hopping mechanism. The conduction in the first region is due to impurity charge carriers. In the second and third regions it is influenced by the order-disorder hopping mechanism. The variation of resistivity with Mn concentration shows an increase in resistivity up to x equals 0.10 and decreases with further increase of x. The increase in resistivity is due to stable bond formation of Fe2 + Mn+3 at B site which hinders the Verway mechanism. The decrease in resistivity is attributed to the formation of Ni3+, Mn3+ clusters and Mn3O4 + Mn2O3 impurity phases. Additional trapping due to local Jahn-Teller distortion around Mn3 and Mn4 also plays an important role in these materials.

Paper Details

Date Published: 1 February 1992
PDF: 4 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57040
Show Author Affiliations
M. G. Patil, Shivaji Univ. (India)
V. C. Mahajan, Shivaji Univ. (India)
B. V. Bhise, Shivaji Univ. (India)
S. M. Chandake, Shivaji Univ. (India)
B. L. Patil, Shivaji Univ. (India)
A. B. Patil, Shivaji Univ. (India)
S. R. Sawant, Shivaji Univ. (India)
S. A. Patil, Shivaji Univ. (India)

Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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