Proceedings Paper
Properties of 35-GHz InP DDR| Format | Member Price | Non-Member Price |
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Paper Abstract
Microwave device characteristics of 35 GHz InP DDR have been obtained through accurate numerical simulation, and those are compared with the properties of Si and GaAs DDRs. The results indicate InP as a promising material for fabrication of IMPATT devices.
Paper Details
Date Published: 1 February 1992
PDF: 4 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57038
Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)
PDF: 4 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57038
Show Author Affiliations
S. K. Ray, Univ. of Calcutta (India)
Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)
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