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Proceedings Paper

Photoemission from the surface of silicon using a simple local dielectric model
Author(s): R. K. Thapa; P. Das; Nikhiles Kar
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Paper Abstract

Calculations of the variation of the photon field in the surface region of Si is presented which plays a significant role during photoemission. Ab initio calculations of vector potential gives information about the nature of the photocurrent emitted from the surface of Si. The scattering cross-section from the surface of Si is also calculated whose dependents on the photon energy is shown.

Paper Details

Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57025
Show Author Affiliations
R. K. Thapa, North Eastern Hill Univ. (India)
P. Das, North Bengal Univ. (India)
Nikhiles Kar, North Bengal Univ. (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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