Proceedings Paper
Electronic conduction and density of states in Pb-modified amorphous germanium sulfide semiconductors| Format | Member Price | Non-Member Price |
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Paper Abstract
Amorphous semiconductors in the system GexS1-x are an interesting class of materials which exhibit quite different short range order in crystalline and amorphous state and form stoichiometric compositions like GeS, GeS2 Ge2S3. Lead sulphide has been found to form stable glasses with GeS2 in the presence of GeS. The exhibit photoconductivity of ambiopolar type1 Nature of electronic transport in these semiconductors is not well understood. It is of interest to study their electronic properties ard determine density of defect states in the bard gap. In this communication we have studied the a.c. conductivity of bulk amorphous (PbS)x(Ges)0 7-x (Ges2) and Ge42S58.
Paper Details
Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57024
Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57024
Show Author Affiliations
S. K. Malik, Maharishi Dayanand Univ. (India)
K. L. Bhatia, Maharishi Dayanand Univ. (India)
Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)
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