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Proceedings Paper

Hydrogenation effects on Ni/n-Si(111) Schottky diode characteristics
Author(s): P. P. Sahay; M. Shamsuddin; R. S. Srivastava
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Paper Abstract

Experiments have been performed on Ni/n-Si(111) Schottky diodes fabricated by the thermal vacuum deposition of nickel on n/n+ Si epitaxial wafers at approximately 10-5 torr pressure. (I - V) and (C - V) characteristics have been measured at different frequencies in the range 10 KHz-1 MHz. Hydrogenation effects on the diode characteristics have been reported from (I - V) and (C - V) studies. It has been found that hydrogen lowers the work function of nickel and also generates the interfacial traps at the Si- SiO2 interface. These results are found in agreement with the results based on transient capacitance response and (C - V) studies. Slight passivation of deep donor states responding the low frequency test signal has also been observed after hydrogenating the diode. Interface states parameters have been extracted from (C - V) characteristics using the metal-interfacial layer semiconductor (MIS) structure model.

Paper Details

Date Published: 1 February 1992
PDF: 6 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57022
Show Author Affiliations
P. P. Sahay, Banaras Hindu Univ. (India)
M. Shamsuddin, Banaras Hindu Univ. (India)
R. S. Srivastava, Banaras Hindu Univ. (India)

Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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