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Proceedings Paper

Postbreakdown behaviour of metal-oxide-semiconductor diodes
Author(s): K. S. Gurumurthy; Krishnaswamy Ramkumar; M. Satyam
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Paper Abstract

Metal-Oxide-Semiconductor (MOS) diodes with approximately equals 300 angstroms thick, thermally grown silicide dioxide (SiO2) films were subjected to time-dependent oxide breakdown (TDOB) by applying a constant voltage (electrical stress). The breakdown of the oxide was achieved under the accumulation region of the substrate. After the breakdown of the oxide, V - I characteristics of the devices were measured. The observed characteristics are similar to the characteristics of a solid-state rectifier in nature. This behavior of the MOS samples has been qualitatively explained in this paper, on the basis of the nucleation and growth of the crystalline silicon from the oxide layers during the oxide breakdown process.

Paper Details

Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57016
Show Author Affiliations
K. S. Gurumurthy, U.V.C.E. (India)
Krishnaswamy Ramkumar, Indian Institute of Science (India)
M. Satyam, Indian Institute of Science (India)

Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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