Proceedings Paper
Growth and XPS depth profiling of thermal oxides on polycrystalline GaAs thin films| Format | Member Price | Non-Member Price |
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Paper Abstract
Oxide layers on polycrystalline GaAs thin films were grown by thermal oxidation at 10-4 torr. In depth profiles of the oxide layers were obtained by in situ Ar+ ion etching in x-ray photoelectron studies at different stages of sputter etching. These studies reveal a pile-up of elemental As at the interface between the GaAs film and the oxide layer. The observed compositional variation in the oxide layer at different depths is related to the selective sputtering of As O to As. Some of these results are presented.
Paper Details
Date Published: 1 February 1992
PDF: 5 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56996
Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)
PDF: 5 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56996
Show Author Affiliations
S. S.V. Avadhani, Indian Institute of Technology (India)
S. Kasi Viswanathan, Indian Institute of Technology (India)
S. Kasi Viswanathan, Indian Institute of Technology (India)
B. S. V. Gopalam, Indian Institute of Technology (India)
Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)
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