Proceedings Paper
Direct evidence for negative-U nature of DX center in AlxGa1-xAs| Format | Member Price | Non-Member Price |
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Paper Abstract
Photo-deep-level transient spectroscopy detection of a new level with thermal activation energy 0.22 eV of DX centers in silicon doped AlxGa1-xAs (x equals 0.26) is reported for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of metastable state DX degree(s) which is also confirmed by the transient photoconductivity experiment.
Paper Details
Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56992
Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56992
Show Author Affiliations
Subhasis Ghosh, Indian Institute of Science (India)
Vikram Kumar, Indian Institute of Science (India)
Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)
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