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Proceedings Paper

Fabrication and application of a novel freestanding stencil bi-material cantilever structure
Author(s): Weibing Wang; Dapeng Chen; Tianchun Ye; Liang Pan; Qingchuan Zhang; Xiaoping Wu
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Paper Abstract

This paper reports a novel freestanding stencil bi-material cantilever structure without sacrificial layer process in detail; the complexity and costs of fabrication process are reduced greatly. This type of microcantilever is made of two material layers (SiNx/Au), which is a 2dimension device, not a 3dimension one. The cantilevers and the support points are at the same plane in the stencil structure. MEMS sacrificial layer process problems are avoided completely in the process of the freestanding stencil bi-material cantilever microstructure so as to simplify process steps. Since two materials selected in the bi-material cantilever have a large mismatch in thermal conductivity and expansion coefficient, and all cantilevers in the device are freestanding completely, this kind of device is sensitive to a lot of physical varieties, such as thermal, infrared, mechanical vibration and electronic signals. This paper illuminates the total fabrication process of freestanding stencil bi-material cantilever structure; and in particular presents an application of uncooled infrared imaging system based on the novel freestanding bi-material cantilever structure in the final part of this paper.

Paper Details

Date Published: 30 December 2004
PDF: 7 pages
Proc. SPIE 5641, MEMS/MOEMS Technologies and Applications II, (30 December 2004); doi: 10.1117/12.569916
Show Author Affiliations
Weibing Wang, Institute of Microelectronics, CAS (China)
Dapeng Chen, Institute of Microelectronics, CAS (China)
Tianchun Ye, Institute of Microelectronics, CAS (China)
Liang Pan, Univ. of Science and Technology of China (China)
Qingchuan Zhang, Univ. of Science and Technology of China (China)
Xiaoping Wu, Univ. of Science and Technology of China (China)

Published in SPIE Proceedings Vol. 5641:
MEMS/MOEMS Technologies and Applications II
Zhichun Ma; Guofan Jin; Xuyuan Chen, Editor(s)

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