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Proceedings Paper

Investigations on surface passivated CdS and Cds:As-based photoelectrochemical cells
Author(s): Lalasaheb P. Deshmukh; D. S. Hulle; P. P. Hankare; A. H. Manikshete
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Paper Abstract

Cadmium sulphide thin films (equals 3.4 micrometers ) doped with 0.25 wt % As concentration were deposited onto a well-polished stainless steel substrate by an electroless chemical deposition process. The photoelectrochemical (PEC) cells were fabricated using both H2-annealed and etched samples as a photoelectrode, sulphide/polysulphide as an electrolyte, and graphide as a counter electrode. The cell was illuminated by a 100 mW/cm2 light intensity, and the performance of a cell in terms of cell parameters, namely, short circuit current (Isc) open circuit voltage (Voc), junction quality factor ((eta) ), series and shunt resistances (Rs and Rsh), efficiency ((eta) ), fill factor (ff) and barrier height ((Phi) B), has been investigated. It has been found that the cell generates maximum power output when the CdS:As photoelectrode is subjected to a hydrogen atmosphere at 250 degree(s)C for approximately 1 hour and etched with a CuCl:KCN system for 20 seconds. An attempt is made to explain these observations on the basis of a modified surface, improved crystallinity, and enhanced conductivity of the samples.

Paper Details

Date Published: 1 February 1992
PDF: 14 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56965
Show Author Affiliations
Lalasaheb P. Deshmukh, Shivaji Univ. (India)
D. S. Hulle, Shivaji Univ. (India)
P. P. Hankare, Shivaji Univ. (India)
A. H. Manikshete, Shivaji Univ. (India)

Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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