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Proceedings Paper

Specifying phase-shift mask image quality parameters
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Paper Abstract

The mask contribution to overall lithography error budgets historically has been specified to very tight levels. Phase shift masks (PSMs) present new conditions affecting wafer image quality. In this paper we will examine the new effects of PSM dimensional variations on key wafer image parameters such as critical dimension tolerance and registration. An important distinction among alternative phase shift mask strategies is different dependency levels of wafer image quality to imperfections in phase shift mask structures. Test patterns representing several types of PSM types, Alternating, Rim, Sub-resolution, Edge, and Chromeless have been fabricated with the CORE-2564PSM and wafers have been exposed from them. We will present PSM-to-wafer sensitivity results for these PSM strategies, and will propose error budget modelling factors for PSM specification.

Paper Details

Date Published: 1 January 1992
PDF: 9 pages
Proc. SPIE 1604, 11th Annual BACUS Symposium on Photomask Technology, (1 January 1992); doi: 10.1117/12.56954
Show Author Affiliations
Peter D. Buck, ATEQ Corp. (United States)
Michael L. Rieger, ATEQ Corp. (United States)

Published in SPIE Proceedings Vol. 1604:
11th Annual BACUS Symposium on Photomask Technology
Kevin C. McGinnis, Editor(s)

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