Phase shift masks are an opportunity for optical microlithography to face the challenge of submicron devices manufacturing for the next decade. The aim of the paper is to derive from the basic principles of phase shift mask operation, the tolerances requested from phase shift reticles in terms of minimum linewidth, critical dimensions (CD), overlay, writing grid. And to compare these tolerances to specifications of a particular type of Electron Beam Pattern Generator. The impact of CD variation and overlay of the 5X reticle on the Fourier Transform of the pattern are assessed semi quantitatively for simple significative patterns in order to give guidelines for pattern generator specifications.

Date Published: 1 January 1992
PDF: 10 pages
Proc. SPIE 1604, 11th Annual BACUS Symposium on Photomask Technology, (1 January 1992); doi: 10.1117/12.56934

Published in SPIE Proceedings Vol. 1604:
11th Annual BACUS Symposium on Photomask Technology
Kevin C. McGinnis, Editor(s)