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Proceedings Paper

Simulating the process flow of the Nikon EPL new geometry mask
Author(s): Jaehyuk Chang; Roxann L. Engelstad; Edward G. Lovell; Michael R. Sogard
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Paper Abstract

The International Technology Roadmap for Semiconductors requires improvements in resolution for each lithographic node. In order to meet the resolution requirements for the sub-65-nm nodes, image placement (IP) errors induced by chucking the mask during e-beam patterning, metrology, and exposure must be characterized and minimized. This study focused on a 200-mm electron projection lithography (EPL) stencil mask designed for high throughput. Finite element models were developed to simulate the response of the mask throughout a typical fabrication process flow, including the electrostatic chucking during e-beam patterning and EPL exposure. The results of this predictive study were used to identify the primary sources of IP error as a function of the system parameters.

Paper Details

Date Published: 6 December 2004
PDF: 11 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569315
Show Author Affiliations
Jaehyuk Chang, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Edward G. Lovell, Univ. of Wisconsin/Madison (United States)
Michael R. Sogard, Nikon Research Corp. of America (United States)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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