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Proceedings Paper

Comparative study of mask architectures for EUV lithography
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Paper Abstract

Three different architectures were compared as candidates for EUV lithography masks. Binary masks were fabricated using two different stacks of absorber materials and using a selective etching process to directly pattern the multilayer of the mask blank. To compare the effects of mask architecture on resist patterning, all three masks were used to print features into photoresist on the EUV micro-exposure tool (MET) at Lawrence Berkeley National Laboratory. Process windows, depth of focus, mask contrast at EUV, and horizontal and vertical line width bias were use as metrics to compare mask architecture. From printing experiments, a mask architecture using a tantalum nitride absorber stack exhibited the greatest depth of focus and process window of the three masks. Experimental results obtained using prototype masks are discussed in relation to simulations. After accounting for CD biasing on the masks, similar performance was found for all three mask architectures.

Paper Details

Date Published: 6 December 2004
PDF: 12 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569289
Show Author Affiliations
Adam Richard Pawloski, Advanced Micro Devices, Inc. (United States)
Bruno La Fontaine, Advanced Micro Devices, Inc. (United States)
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)
Stefan Hirscher, Infineon Technologies AG (Germany)
Siegfried Schwarzl, Infineon Technologies AG (Germany)
Klaus Lowack, Infineon Technologies AG (Germany)
Frank-Michael Kamm, Infineon Technologies AG (Germany)
Markus Bender, Infineon Technologies AG (Germany)
Wolf-Dieter Domke, Infineon Technologies AG (Germany)
Christian Holfeld, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Uwe Dersch, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Florian Letzkus, IMS Chips (Germany)
Joerg Butschke, IMS Chips (Germany)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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