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Proceedings Paper

Limits of high-modulation bandwidth of VCSELs
Author(s): Hong-Dong Zhao; Ping He; Mei Sun; Huai-Peng Wei; Yan Li; Tong Chen; Lian-Wei Liang; Tie-Gen Liu
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Paper Abstract

The light intensity response and the transfer function of laser are given in small signal in order invest the upper modulation frequency of VCSELs. The cures of the relaxation oscillation frequency and -3dB bandwidth versus the differential gain coefficient and the spontaneous emission lifetime are presented. The results show that the high speed modulation characteristics can be achieved by increasing the differential gain. We also find out the modulation frequency of VCSELs is improved by decreasing carrier lifetime in the quantum well VCSELs. The spontaneous emission lifetime versus the cavity length is also presented due to the micro-cavity effect. The ultimate limit of direct modulation bandwidth in VCSELs is explored. A new scheme to increase the modulation bandwidth is proposed.

Paper Details

Date Published: 31 January 2005
PDF: 6 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.569230
Show Author Affiliations
Hong-Dong Zhao, Hebei Univ. of Technology (China)
Ping He, Hebei Univ. of Technology (China)
Mei Sun, Hebei Univ. of Technology (China)
Huai-Peng Wei, Hebei Univ. of Technology (China)
Yan Li, Hebei Univ. of Technology (China)
Tong Chen, Hebei Univ. of Technology (China)
Lian-Wei Liang, Hebei Univ. of Technology (China)
Tie-Gen Liu, Tianjin Univ. (China)

Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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