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Proceedings Paper

Full-chip model-based correction of flare-induced linewidth variation
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Paper Abstract

Scattered light in optical lithography, also known as flare, has been shown to cause potentially significant linewidth variation at low-k1 values. The interaction radius of this effect can extend essentially from zero to the full range of a product die and beyond. Because of this large interaction radius the correction of the effect can be very computation-intensive. In this paper, we will present the results of our work to characterize the flare effect for 65nm and 90nm poly processes, model that flare effect as a summation of gaussian convolution kernels, and correct it within a hierarchical model based OPC engine. Novel methods for model based correction of the flare effect, which preserve much of the design hierarchy, is discussed. The same technique has demonstrated the ability to correct for long-range loading effects encountered during the manufacture of reticles.

Paper Details

Date Published: 6 December 2004
PDF: 11 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004);
Show Author Affiliations
James Word V, Mentor Graphics Corp. (United States)
Jerome Belledent, Philips Semiconductors (France)
Yorick Trouiller, STMicroelectronics (France)
Wilhelm Maurer, Mentor Graphics Corp. (United States)
Yuri Granik, Mentor Graphics Corp. (United States)
Emile Sahouria, Mentor Graphics Corp. (United States)
Olivier Toublan, Mentor Graphics Corp. (United States)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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