Proceedings Paper
Applications of GaN-based materials in modern optoelectronics| Format | Member Price | Non-Member Price |
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Paper Abstract
In this paper new designs of modern optoelectronics devices based on GaN-type materials are presented. First, fundamental properties of gallium nitrides are presented, with special attention paid to its optical characteristics. Then examples of devices fabricated at Wroclaw University of Technology are shown, namely MSM detectors based on AlGaN. A short literature overview of devices based on gallium nitride compounds is also given. Presented applications include DFB lasers, structure, LED, optical waveguides, photonic crystals and light modulators made of GaN compounds.
Paper Details
Date Published: 22 July 2004
PDF: 8 pages
Proc. SPIE 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, (22 July 2004); doi: 10.1117/12.568864
Published in SPIE Proceedings Vol. 5484:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II
Ryszard S. Romaniuk, Editor(s)
PDF: 8 pages
Proc. SPIE 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, (22 July 2004); doi: 10.1117/12.568864
Show Author Affiliations
Rafal Dylewicz, Wroclaw Univ. of Technology (Poland)
Sergiusz Z. Patela, Wroclaw Univ. of Technology (Poland)
Sergiusz Z. Patela, Wroclaw Univ. of Technology (Poland)
Regina Paszkiewicz, Wroclaw Univ. of Technology (Poland)
Published in SPIE Proceedings Vol. 5484:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II
Ryszard S. Romaniuk, Editor(s)
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