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Proceedings Paper

Experimental determination of diffusion length in SWIR HgCdTe photodiodes
Author(s): Jia Jia; Guibin Chen; Xiangyang Li; Haimei Gong
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Paper Abstract

Minority carrier diffusion length is a key parameter of material quality and gives an indication of diode performance. It is also one important parameter when considering the increase of the effective optical sensitive area caused by the lateral diffusion and the crosstalk between individual detectors on a focal plane array (FPA). In this paper, we perform diffusion length measurements with two methods on short wavelength infrared (SWIR) HgCdTe photovoltaic devices. One method is based on the different behaviors of electrons and holes in a variation magnetic field B and their effects on the saturation current density J0. The other method is an optical characterization technique called Laser Beam Induced Current (LBIC). The results were in good agreement with each other.

Paper Details

Date Published: 10 January 2005
PDF: 10 pages
Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005); doi: 10.1117/12.568163
Show Author Affiliations
Jia Jia, Shanghai Institute of Technical Physics, CAS (China)
Guibin Chen, Shanghai Institute of Technical Physics, CAS (China)
Xiangyang Li, Shanghai Institute of Technical Physics, CAS (China)
Haimei Gong, Shanghai Institute of Technical Physics, CAS (China)

Published in SPIE Proceedings Vol. 5640:
Infrared Components and Their Applications
Haimei Gong; Yi Cai; Jean-Pierre Chatard, Editor(s)

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