Share Email Print

Proceedings Paper

MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Mid wavelength infrared (MWIR) HgCdTe heterostructures were grown on 3-inch dia Si (211) substrates by the molecular beam epitaxy technique and p+n format devices were fabricated by arsenic ion implantation. Very long wavelength infrared (VLWIR) layers have been employed as interfacial layers to block the propagation of detects from the substrate interface into the HgCdTe epilayers. Excellent material characteristics including the minority carrier lifetime of 7.2 usec at 200K and 2 usec at 80K in the n-HgCdTe absorber layer with 5 um cut-off wavelength at 80K were achieved. The photovoltaic detectors fabricated on these MWIR heterostructures show excellent zero-bias resistance-area product (R0A) on the order of 108 ohm-cm2 and peak dynamic impedances on the order of 109 ohm-cm2. A two-step arsenic activation anneal followed by the 'Hg' vacancy filling anneal (third step) is shown to produce the best R0A values, since the intermediate temperature annealing step seems to control the diffusion of arsenic, assisted by the implantation-induced defects. The experimental R0A values are compared with that predicted by theory based on a one-dimensional model, indicating g-r limited performance of these MWIR devices at 80K.

Paper Details

Date Published: 22 October 2004
PDF: 10 pages
Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); doi: 10.1117/12.568012
Show Author Affiliations
Tae-Seok Lee, Univ. of Illinois/Chicago (United States)
Jun Zhao, Univ. of Illinois/Chicago (United States)
Yong Chang, Univ. of Illinois/Chicago (United States)
Renganathan Ashokan, Univ. of Illinois/Chicago (United States)
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)
Paul Boieriu, EPIR Technologies, Inc. (United States)
Yuanping Chen, Army Research Lab. (United States)
Gregory Brill, Army Research Lab. (United States)
Priyalal S. Wijewarnasuriya, Army Research Lab. (United States)
Nibir K. Dhar, Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 5564:
Infrared Detector Materials and Devices
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?